Tuning the properties of VO2 thin films through growth temperature for infrared and terahertz modulation applications

作者: Yong Zhao , Changhong Chen , Xuan Pan , Yanhan Zhu , Mark Holtz

DOI: 10.1063/1.4821846

关键词: Materials scienceElectrical resistivity and conductivityMetal–insulator transitionSputter depositionAnalytical chemistryPhase transitionTerahertz radiationCondensed matter physicsElectrical measurementsThin filmInfrared

摘要: Results are reported on tuning the electrical and optical properties of sputter-deposited vanadium dioxide (VO2) thin films through control substrate growth temperature (Ts). As Ts increases from 550 to 700 °C, morphology changes granular smooth film finally rough film. X-ray diffraction shows presence VO2 along with additional weak features related non-stoichiometric phases. Electrical measurements show phase transition change abrupt gradual as both below- above-transition resistivities vary Ts. The hysteresis dependences observed in resistivity similarly infrared transmission. Terahertz transmission that high conductivity above is more important achieving modulation depth than obtaining below transition. We attribute formation V O vacancies, which result diverse valence states ideal V4+ VO2. Low produces material V5+ resulting higher insulating metallic Alternatively, introduces V3+ leading lower but slightly phase.

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