作者: Yong Zhao , Changhong Chen , Xuan Pan , Yanhan Zhu , Mark Holtz
DOI: 10.1063/1.4821846
关键词: Materials science 、 Electrical resistivity and conductivity 、 Metal–insulator transition 、 Sputter deposition 、 Analytical chemistry 、 Phase transition 、 Terahertz radiation 、 Condensed matter physics 、 Electrical measurements 、 Thin film 、 Infrared
摘要: Results are reported on tuning the electrical and optical properties of sputter-deposited vanadium dioxide (VO2) thin films through control substrate growth temperature (Ts). As Ts increases from 550 to 700 °C, morphology changes granular smooth film finally rough film. X-ray diffraction shows presence VO2 along with additional weak features related non-stoichiometric phases. Electrical measurements show phase transition change abrupt gradual as both below- above-transition resistivities vary Ts. The hysteresis dependences observed in resistivity similarly infrared transmission. Terahertz transmission that high conductivity above is more important achieving modulation depth than obtaining below transition. We attribute formation V O vacancies, which result diverse valence states ideal V4+ VO2. Low produces material V5+ resulting higher insulating metallic Alternatively, introduces V3+ leading lower but slightly phase.