Conductance increase in n-PbTe-films via ion bombardment
作者： N. Marschall
DOI: 10.1016/0375-9601(67)90486-0
关键词: Conductance 、 Physics 、 Ion bombardment 、 Atomic physics 、 General Physics and Astronomy
摘要: Abstract Ion bombardment of evaporated n-PbTe-films creates excess carriers which anneal below 150°K with activation energies from 0.25 to 0.40 eV.
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