作者: Chris J. Pickard , R. J. Needs
DOI: 10.1103/PHYSREVLETT.97.045504
关键词: Electronic structure 、 High pressure 、 Silicon 、 Hydrogen 、 Chemical physics 、 Superconductivity 、 Work (thermodynamics) 、 Silane 、 Materials science
摘要: High-pressure phases of silane SiH 4 are predicted using first-principles electronic structure methods. We search for low-enthalpy structures by relaxing from randomly chosen initial configurations, a strategy which is demonstrated to work well for unit cells containing up to at least ten atoms. We predict that silane will metallize at higher pressures than previously anticipated but might show high-temperature superconductivity at experimentally accessible pressures.