Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs
作者： Jiwon Chang
DOI: 10.1063/1.4921806
关键词: Length scale 、 Ballistic conduction 、 Physics 、 Field-effect transistor 、 Scaling 、 Semiconductor 、 Monolayer 、 Phosphorene 、 Condensed matter physics 、 Anisotropy
摘要: Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional (2-D) materials monolayer HfS2 and phosphorene are explored through quantum simulations. We focus the effects channel crystal orientation length scaling device performances. Especially, role degenerate conduction band (CB) valleys in is comprehensively analyzed. Benchmarking with MOSFETs, we predict that performances much weaker than due to CB HfS2. Our simulations also reveal that, at 10 nm scale, MOSFETs outperform terms onstate current. However, it observed may offer comparable, but a little bit degraded, as compared 5 length.
core.ac.uk
harvard.edu
arxiv.org
sci-hub.se 参考文章(28)
Nihar R. Pradhan, Shahriar Memaran, Mauricio Terrones, Humberto Terrones, Byoung Hee Moon, Simin Feng, Luis Balicas, Daniel Rhodes, Yan Xin, Field-effect transistors based on few-layered α-MoTe2 ACS Nano. ,vol. 8, pp. 5911- 5920 ,(2014) , 10.1021/NN501013C
Hongming Weng, Taisuke Ozaki, Kiyoyuki Terakura, Revisiting magnetic coupling in transition-metal-benzene complexes with maximally localized Wannier functions Physical Review B. ,vol. 79, pp. 235118- ,(2009) , 10.1103/PHYSREVB.79.235118
Fei Liu, Yijiao Wang, Xiaoyan Liu, Jian Wang, Hong Guo, Ballistic Transport in Monolayer Black Phosphorus Transistors IEEE Transactions on Electron Devices. ,vol. 61, pp. 3871- 3876 ,(2014) , 10.1109/TED.2014.2353213
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors Nature Nanotechnology. ,vol. 6, pp. 147- 150 ,(2011) , 10.1038/NNANO.2010.279
Jingsi Qiao, Xianghua Kong, Zhi-Xin Hu, Feng Yang, Wei Ji, High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus Nature Communications. ,vol. 5, pp. 4475- 4475 ,(2014) , 10.1038/NCOMMS5475
G. Lucovsky, R. M. White, J. A. Benda, J. F. Revelli, Infrared-Reflectance Spectra of Layered Group-IV and Group-VI Transition-Metal Dichalcogenides Physical Review B. ,vol. 7, pp. 3859- 3870 ,(1973) , 10.1103/PHYSREVB.7.3859
John P. Perdew, Yue Wang, Accurate and simple analytic representation of the electron-gas correlation energy Physical Review B. ,vol. 45, pp. 13244- 13249 ,(1992) , 10.1103/PHYSREVB.45.13244
Yongqing Cai, Gang Zhang, Yong-Wei Zhang, Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene Scientific Reports. ,vol. 4, pp. 6677- 6677 ,(2015) , 10.1038/SREP06677
Wenxu Zhang, Zhishuo Huang, Wanli Zhang, Yanrong Li, Two dimensional semiconductors with possible high room temperature mobility arXiv: Materials Science. ,(2014) , 10.1007/S12274-014-0532-X
Jiwon Chang, Chris Hobbs, Theoretical study of phosphorene tunneling field effect transistors Applied Physics Letters. ,vol. 106, pp. 083509- ,(2015) , 10.1063/1.4913842