Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition.
作者： Chia-Hsun Hsu , Chien-Jung Huang , Wan-Yu Wu , Pao-Hsun Huang , Zhi-Xuan Zhang
DOI: 10.3390/MA14030690
关键词: Radical 、 Materials science 、 Argon 、 Deposition (chemistry) 、 Band gap 、 Atomic layer deposition 、 Analytical chemistry 、 Thin film 、 Tin oxide 、 Plasma
摘要: In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films is investigated. The SnO2 thin films are …
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