Scaling of nano-Schottky-diodes
作者： G. D. J. Smit , S. Rogge , T. M. Klapwijk
DOI: 10.1063/1.1521251
关键词: Characteristic length 、 Diode 、 Nano- 、 Rectangular potential barrier 、 Schottky barrier 、 Optoelectronics 、 Doping 、 Quantum tunnelling 、 Schottky diode 、 Materials science
摘要: … by the size and shape of the diode. The resulting thin barrier in small diodes will give rise to … The transport properties of a Schottky diode are governed by the potential landscape that …
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