Process for the production of thin semiconductor material films
作者： Michel Bruel
DOI:
关键词: Volume (thermodynamics) 、 Engineering drawing 、 Layer (electronics) 、 Planar 、 Thin film 、 Heat treating 、 Substrate (printing) 、 Wafer 、 Composite material 、 Process (computing) 、 Materials science
摘要: Process for the preparation of thin moncrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a wafer having planar face to three following stages: first stage implantation by bombardment (2) (4) said (1) means ions creating volume layer (3) gaseous microbubbles defining lower region (6) constituting mass substrate and an upper (5) film, second intimately contacting with stiffener (7) constituted at least one rigid layer, third heat treating assembly temperature above which ion was carried out sufficient create crystalline rearrangement effect pressure microbubbles, separation between film (5 ) (6).
google.com.mx 参考文章(110)
Niels N Engel, Ion plating method and product therefrom ,(1972)
Donald F. Wilkes, Process for cleaving crystalline materials ,(1979)
Richard Shyr, Wafer level process for fabricating passivated semiconductor devices ,(1988)
Myers Robert J, Hillberry Benny M, Method for fracturing crystalline materials ,(1973)
Wayne M. Moreau, Semiconductor Lithography: Principles, Practices, and Materials ,(1987)
Eugene Fournier, Apparatus for microwave glow discharge deposition ,(1985)
Paul S. Reinecke, George V. Rouse, Craig J. McLachlan, Manufacturing ultra-thin wafer using a handle wafer ,(1990)
Joseph Labartino, Michel Bruel, Jean Escaron, Target holder with mechanical scanning ,(1983)
Josef Kramler, Hans-Adolf Gerber, Franz Kuhn-Kuhnenfeld, Process for the manufacture of semiconductor wafers with a rear side having a gettering action ,(1983)