Formation of YSi2-x layers on Si by high-current Y ion implantation
作者： R S Wang , X Q Cheng , W S Lai , B X Liu
DOI: 10.1088/0022-3727/34/16/310
关键词: Ion beam deposition 、 Ion implantation 、 Mineralogy 、 Wafer 、 Ion beam mixing 、 Analytical chemistry 、 Vacuum arc 、 Ion source 、 Ion beam 、 Ion 、 Materials science
摘要: Yttrium ion implantation was conducted to synthesize Y-disilicide films on silicon wafers, using a metal vapour vacuum arc source and the continuous stable YSi2 were directly obtained with neither external heating nor post-annealing. The formation mechanism of phase is also discussed, in terms temperature rise caused by beam dose process implantation.
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sci-hub.se 参考文章(15)
M. F. Wu, A. Vantomme, S. Hogg, H. Pattyn, G. Langouche, Channeled ion beam synthesis of heteroepitaxial Nd0.32Y0.68Si1.7 layers Applied Physics Letters. ,vol. 72, pp. 2412- 2414 ,(1998) , 10.1063/1.121370
Alice E. White, K. T. Short, R. C. Dynes, J. P. Garno, J. M. Gibson, Mesotaxy: single-crystal growth of buried CoSi2 layers Applied Physics Letters. ,vol. 50, pp. 95- 97 ,(1987) , 10.1063/1.97830
J. E. E. Baglin, F. M. d’Heurle, C. S. Petersson, Diffusion marker experiments with rare‐earth silicides and germanides: Relative mobilities of the two atom species Journal of Applied Physics. ,vol. 52, pp. 2841- 2846 ,(1981) , 10.1063/1.329015
J. E. Baglin, F. M. d’Heurle, C. S Petersson, The formation of silicides from thin films of some rare‐earth metals Applied Physics Letters. ,vol. 36, pp. 594- 596 ,(1980) , 10.1063/1.91559
H. Norde, J. de Sousa Pires, F. d’Heurle, F. Pesavento, S. Petersson, P. A. Tove, The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) and p‐type silicon Applied Physics Letters. ,vol. 38, pp. 865- 866 ,(1981) , 10.1063/1.92201
K. N. Tu, R. D. Thompson, B. Y. Tsaur, Low Schottky barrier of rare‐earth silicide onn‐Si Applied Physics Letters. ,vol. 38, pp. 626- 628 ,(1981) , 10.1063/1.92457
B. X. Liu, D. H. Zhu, H. B. Lu, F. Pan, K. Tao, Synthesis of β‐ and α‐FeSi2 phases by Fe ion implantation into Si using metal vapor vacuum arc ion source Journal of Applied Physics. ,vol. 75, pp. 3847- 3854 ,(1994) , 10.1063/1.356064
R. D. Thompson, B. Y. Tsaur, K. N. Tu, Contact reaction between Si and rare earth metals Applied Physics Letters. ,vol. 38, pp. 535- 537 ,(1981) , 10.1063/1.92442
J. A. Knapp, S. T. Picraux, Epitaxial growth of rare‐earth silicides on (111) Si Applied Physics Letters. ,vol. 48, pp. 466- 468 ,(1986) , 10.1063/1.96532
D.H. Zhu, Y.G. Chen, B.X. Liu, Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. ,vol. 101, pp. 394- 399 ,(1995) , 10.1016/0168-583X(95)00478-5