Photovoltaic Intersubband Photodetectors Using GaAs Quantum Wells Confined by AlAs Tunnel Barriers
作者： Harald Schneider , Kuntheak Kheng , Frank Fuchs , John D. Ralston , Bernhard Dischler
DOI: 10.1007/978-1-4615-3346-7_7
关键词: Photodetection 、 Excitation 、 Quantum tunnelling 、 Materials science 、 Shot noise 、 Photodetector 、 Electron 、 Optoelectronics 、 Dark current 、 Quantum well
摘要: Intersubband excitation of carriers in quantum well structures has been used extensively order to realize infrared photodetector devices at 8-12 μm1--3 and, more recently, novel imaging cameras:4,5 There also an increasing interest intersubband photodetection the 3-5 μm regime, first realized In0.53Ga0.47Asfino.52A10.48As system6. In case GaAs MQW structures, this wavelength range is only accessible for indirect-gap AlxGa1-x As barrier material, i. e., x > 0.45.1,7 We have recently a different approach where large spacings are achieved by using double wells (DBQW), introducing thin AlAs tunnel barriers between and direct-gap AlrGa1-x layers.8 Good detector performance was since lowest conduction subband strictly confined layers while tunneling escape time electrons out second controlled thickness barriers.
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