Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures
作者： E. Colas , A. Shahar , B.D. Soole , W.J. Tomlinson , J.R. Hayes
DOI: 10.1016/0022-0248(91)90461-D
关键词: Chemical vapor deposition 、 Crystal growth 、 Dielectric 、 Waveguide 、 Semiconductor 、 Substrate (electronics) 、 Deposition (phase transition) 、 Mineralogy 、 Single-mode optical fiber 、 Chemistry 、 Optoelectronics
摘要: Abstract Two methods which achieve both lateral and longitudinal patterning of semiconductor properties by organometallic chemical vapor deposition (OMCVD) are presented. Both approaches utilize diffusion reactant species from a nongrowth surface to an adjacent growth surface, presumably via the gas phase. In first method, is (111)B facet develops during on GaAs substrate where mesas in (011) orientation have been etched prior growth. Low-loss single mode rib-type waveguides (0.6 dB/cm at 1.52 μm wavelength) were fabricated with this approach. second dielectric mask deposited Growth rate enhancements can be controlled, as high 280% approach, appears more practical than one. This new capability for OMCVD will offer wide range applications.
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