Structure and electronic properties of conducting, ternary TixTa1−xN films
作者： G. M. Matenoglou , Ch. E. Lekka , L. E. Koutsokeras , G. Karras , C. Kosmidis
DOI: 10.1063/1.3131824
关键词: Ab initio quantum chemistry methods 、 Thin film 、 Atomic physics 、 Electronic structure 、 Chemistry 、 Ternary operation 、 Valence electron 、 Density functional theory 、 Spectroscopy 、 Chemical physics 、 Tin
摘要: We report on the electronic structure and optical properties of conducting ternary transition metal nitrides consisting metals different groups periodic table elements. For study bonding, structure, TixTa1−xN film growth, spectroscopy ab initio calculations were used. Despite valence electron configuration constituent elements, Ta(d3s2) Ti(d2s2), we show that TiN TaN are completely soluble due to hybridization d sp electrons N, respectively, stabilizes systems rocksalt structure. The have been studied using spectroscopic methods detailed calculations, revealing plasma energy fully dense is varying between 7.8 9.45 eV. Additional absorption bands manifested N p→Ti/Ta d interband t2g→eg ...
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sci-hub.se 参考文章(43)
Walter A. Harrison, Electronic structure and the properties of solids ,(1980)
Robert L. Carter, Molecular symmetry and group theory ,(1997)
L. E. Koutsokeras, G. Abadias, Ch. E. Lekka, G. M. Matenoglou, D. F. Anagnostopoulos, G. A. Evangelakis, P. Patsalas, Conducting transition metal nitride thin films with tailored cell sizes: The case of δ-TixTa1−xN Applied Physics Letters. ,vol. 93, pp. 011904- ,(2008) , 10.1063/1.2955838
O. Bourbia, S. Achour, N. Tabet, M. Parlinska, A. Harabi, Effect of tantalum addition on microstructure and optical properties of TiN thin films Thin Solid Films. ,vol. 515, pp. 6758- 6764 ,(2007) , 10.1016/J.TSF.2007.02.055
S. M. Aouadi, P. K. Shreeman, M. Williams, Real-time Spectroscopic Ellipsometry Study of Ultrathin Diffusion Barriers for Integrated Circuits Journal of Applied Physics. ,vol. 96, pp. 3949- 3955 ,(2004) , 10.1063/1.1784621
S Gautier, Ph Komninou, P Patsalas, Th Kehagias, S Logothetidis, C A Dimitriadis, G Nouet, Optical and electrical properties of TiN/n-GaN contacts in correlation with their structural properties Semiconductor Science and Technology. ,vol. 18, pp. 594- 601 ,(2003) , 10.1088/0268-1242/18/6/334
J.P. Manaud, A. Poulon, S. Gomez, Y. Le Petitcorps, A comparative study of CrN, ZrN, NbN and TaN layers as cobalt diffusion barriers for CVD diamond deposition on WC–Co tools Surface & Coatings Technology. ,vol. 202, pp. 222- 231 ,(2007) , 10.1016/J.SURFCOAT.2007.05.024
G. Abadias, Stress and preferred orientation in nitride-based PVD coatings Surface & Coatings Technology. ,vol. 202, pp. 2223- 2235 ,(2008) , 10.1016/J.SURFCOAT.2007.08.029
C.-S. Shin, D. Gall, Y.-W. Kim, N. Hellgren, I. Petrov, J. E. Greene, Development of preferred orientation in polycrystalline NaCl-structure δ-TaN layers grown by reactive magnetron sputtering: Role of low-energy ion surface interactions Journal of Applied Physics. ,vol. 92, pp. 5084- 5093 ,(2002) , 10.1063/1.1510558
S.M. Kang, S.G. Yoon, S.J. Suh, D.H. Yoon, Control of electrical resistivity of TaN thin films by reactive sputtering for embedded passive resistors Thin Solid Films. ,vol. 516, pp. 3568- 3571 ,(2008) , 10.1016/J.TSF.2007.08.027