Influence of Interface Traps and Electron-Hole Puddles on Quantum Capacitance and Conductivity in Graphene Field-Effect Transistors
作者： A. A. Tselykovskiy , E. V. Melnik , G. I. Zebrev
DOI:
关键词: Electrical resistivity and conductivity 、 Fermi energy 、 Capacitance 、 Physics 、 Differential capacitance 、 Quantum capacitance 、 Graphene 、 Condensed matter physics 、 Diffusion capacitance 、 Electron hole
摘要: We study theoretically an influence of the near-interfacial insulator traps and electron-hole puddles on small-signal capacitance conductance characteristics gated graphene structures. Based self-consistent electrostatic consideration taking into account interface trap explicit analytic expressions for charge carrier density quantum as functions gate voltage were obtained. This allows to extract states from measurements. It has shown that enables reconcile discrepancies in universal vs Fermi energy extracted different samples. The impact transfer I-V conductivity been investigated. variety widths resistivity peaks various samples could be explained by values.
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