Field-effect transistor, circuit configuration and method of fabricating a field-effect transistor
作者： Wolfgang Roesner , Richard Johannes Luyken , Johannes Kretz
DOI:
关键词: Optoelectronics 、 Communication channel 、 Materials science 、 Static induction transistor 、 Conductance 、 Field-effect transistor
摘要: The gate region of a field effect transistor comprises at least one through hole wherein nanoelement is provided which electrically coupled to the source and drain. may have conductance thereof controlled by means gate, such that forms channel transistor.
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