K-Edge XANES of GaP, InP and GaSb
作者： Hiroaki Oizumi , Junichi Iizuka , Hiroyuki Oyanagi , Takashi Fujikawa , Toshiaki Ohta
DOI: 10.1143/JJAP.24.1475
关键词: Electronic structure 、 Charge density 、 Analytical chemistry 、 K-edge 、 Inorganic compound 、 Spectral line 、 Scattering 、 XANES 、 Atom 、 Molecular physics 、 Chemistry 、 General Engineering 、 General Physics and Astronomy
摘要: X-ray-absorption near-edge structure (XANES) spectra for crystalline GaP, InP and GaSb were measured each Ga P K-edge region. Full multiple scattering calculations are performed. The information on the charge distribution around X-ray-absorbing atom can be obtained by comparing experimental XANES with full calculations. effective cation distributions predicted to q= ~0.33 q=0.42 ~0.5 q \lesssim0.26 GaSb.
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