Quantization noise shaping degradation in switched-current bandpass sigma-delta modulators
作者： Belén Pérez-Verdú , Ángel Rodríguez-Vázquez , José M. de la Rosa , Fernando Medeiro
DOI:
关键词: Electronic engineering 、 Degradation (telecommunications) 、 Delta-sigma modulation 、 Silicon 、 Noise shaping 、 Resolution (electron density) 、 Switched current 、 CMOS 、 Band-pass filter 、 Physics
摘要: This paper presents a systematic analysis of the major switched-current errors and their effects on degradation Noise Shaping for 4th-Order BandPass Σ∆ Modulators. The results obtained have been applied to design silicon prototype in 0.8μm CMOS technology. Experimental show 8-bit resolution 30kHz signal band centered at 2.5MHz with 10MHz clock frequency.(1)
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