Highly transparent and conductive Al-doped ZnO films synthesized by pulsed laser co-ablation of Zn and Al targets assisted by oxygen plasma
作者： Qinghu You , Hua Cai , Kun Gao , Zhigao Hu , Shuang Guo
DOI: 10.1016/J.JALLCOM.2014.11.153
关键词: Thin film 、 Optoelectronics 、 Band gap 、 Materials science 、 Doping 、 Absorption edge 、 Annealing (metallurgy) 、 Wurtzite crystal structure 、 Electrical resistivity and conductivity 、 Dopant 、 Mechanical engineering 、 Materials Chemistry 、 Mechanics of Materials 、 Metals and Alloys
摘要: Abstract Highly optically transparent and electrically conductive Al-doped ZnO (AZO) thin films were deposited by pulsed laser co-ablation of a Zn target an Al in oxygen plasma. ablation resulted the reactive deposition assisted plasma, while provided growing with dopants. The morphology, composition structure as well optical electrical properties characterized effects doping annealing treatment investigated. AZO have hexagonal wurtzite deteriorated crystal quality which can be improved annealing. are highly from ultraviolet up to 1450 nm present obvious blue shift absorption edge widening band gap compared undoped ZnO. also after resistivity decreasing over two orders magnitude because increase free carrier concentration. variation concentration affects transparency infrared region. Meanwhile, this method offers approach for in-situ preparation other doped compound different dopant concentrations.
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