Growth of GaAs by switched laser metalorganic vapor phase epitaxy
作者： Atsutoshi Doi , Yoshinobu Aoyagi , Susumu Namba
DOI: 10.1063/1.96787
关键词: Thin film 、 Crystal 、 Inorganic chemistry 、 Epitaxy 、 Metalorganic vapour phase epitaxy 、 Optoelectronics 、 Trimethylgallium 、 Atomic layer epitaxy 、 Chemical vapor deposition 、 Chemistry 、 Crystal growth
摘要: Crystal growth of GaAs by switched laser metalorganic vapor phase epitaxy (SL MOVPE) is reported. This technique achieved combining MOVPE and atomic layer epitaxy. The process in SL can be explained a model which assumes that trimethylgallium adsorbed on the crystal surface decomposed photocatalytic reaction decomposition rate depends species present substrate.
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