Nanopillar field-effect and junction transistors
作者： Axel Scherer , Chieh-Feng Chang , Aditya Rajagopal
DOI:
关键词: Field effect 、 Electrode 、 Layer (electronics) 、 Transistor 、 Fabrication 、 Nanopillar 、 Field-effect transistor 、 Silicon nitride 、 Materials science 、 Optoelectronics 、 Nanotechnology
摘要: Methods for fabrication of nanopillar field effect transistors are described. These can have high height-to-width aspect ratios and be CMOS compatible. Silicon nitride may used as a masking material. variety applications, example they molecular sensing if the has functionalized layer contacted to gate electrode. The functional bind molecules, causing an electrical signal in transistor.
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