Silicon carbide for UV, alpha, beta and X-ray detectors: Results and perspectives
DOI: 10.1016/J.NIMA.2007.08.212
关键词: Physics 、 Photodetector 、 Detector 、 Optics 、 Dark current 、 Operating temperature 、 Silicon carbide 、 X-ray detector 、 Leakage (electronics) 、 Optoelectronics 、 Irradiation
摘要: Abstract Silicon carbide (SiC) is one of the candidates for next generation semiconductor materials. Due to wide bandgap (4H-SiC 3.2 eV), high critical breakdown voltage, saturated drift velocity, thermal conductivity, detector fabricated with SiC has very low dark current, significantly operating temperature and UV sensors, insensitivity visible/IR backgrounds compared conventional Si detectors. In this paper, recent results on UV, alpha, beta X-ray 4H-SiC detectors will be presented. High-energy resolution full charge collection efficiency (CCE) have successfully been demonstrated before irradiation. After irradiation, alpha continue operative, a CCE until fluences order some 10 14 n/cm 2 . The show that photodetectors are capable as solar-blind detector. pixel leakage currents few femptoamperes at room temperature, which means noise contribution less than 1 e − r.m.s. High performance can achieved even above without using any cooling system.
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