Electrothermal simulation of multichip-modules with novel transient thermal model and time-dependent boundary conditions
作者： Y.C. Gerstenmaier , A. Castellazzi , G.K.M. Wachutka
关键词: Transistor 、 MOSFET 、 Short circuit 、 AC/AC converter 、 Transient (oscillation) 、 Computer simulation 、 Engineering 、 Electronic engineering 、 Power electronics 、 Equivalent circuit
摘要: The ability of monitoring the chip temperatures power semiconductor modules at all times under various realistic working conditions is basis for investigating limits maximum permissible load. A novel transient thermal model fast calculation temperature fields and hot spot evolution presented recently extended to include time-dependent boundary variations ambient surface heat flows. For this a Green's function representation field used. Also, general initial are included. method exemplified by application dc/ac converter module automotive hybrid drives. model, which can be represented equivalent circuit, then combined with an electrical PSpice-metal-oxide field-effect transistor (MOSFET) allow fully self-consistent electrothermal circuit simulation 42-V/14-V dc/dc-converter modules. 670 periods altogether 8000MOSFET switching cycles in six-chip simulated within 1-h computing time on Pentium PC. Various results presented, demonstrate feasibility optimization losses. Short modes operation investigated high increase also revealing interaction between different chips.
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