SiC buried layer formation by ion beam synthesis at 950 °C
作者： A. Nejim , P. L. F. Hemment , J. Stoemenos
DOI: 10.1063/1.113112
关键词: Materials science 、 Overlayer 、 Crystallography 、 Ion implantation 、 Crystallographic defect 、 Redistribution (chemistry) 、 Single crystal 、 Transmission electron microscopy 、 Ion beam 、 Optoelectronics 、 Silicon
摘要: Carbon implantation into Si at a temperature of 950 °C and doses in the range 0.2×1018 to 1×1018 cm−2 200 keV results formation β‐SiC buried layers having same orientation as matrix. Under these conditions redistribution implanted species occurs enabling layer with an overlayer high quality single crystal which is free structural defects. The was investigated by Rutherford backscattering transmission electron microscopy. A mechanism for without generation defects matrix proposed.
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sci-hub.se 参考文章(1)
Paolo Mazzoldi, George Arnold, Ion beam modification of insulators Elsevier. ,(1987)