Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires
作者： Yong Kim , Hannah J. Joyce , Qiang Gao , H. Hoe Tan , Chennupati Jagadish
DOI: 10.1021/NL052189O
关键词: Photoluminescence 、 Nanowire 、 Metalorganic vapour phase epitaxy 、 Nanotechnology 、 Chemical vapor deposition 、 Materials science 、 Epitaxy 、 Nanoparticle 、 Silicon 、 Optoelectronics 、 Ternary operation
摘要: We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. observed the strong influence of density height, tapering, and base shape specific with high In composition. This dependency was attributed large difference diffusion length between Ga reaction species, being more mobile species. Energy dispersive X-ray spectroscopy analysis together high-resolution electron microscopy study individual shows In/Ga compositional variation along supporting present model. Photoluminescence spectra exhibit a red shift decreasing due higher degree incorporation in sparsely distributed nanowires.
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MT Björk, BJ Ohlsson, Claes Thelander, AI Persson, Knut Deppert, LR Wallenberg, Lars Samuelson, None, Nanowire resonant tunneling diodes Applied Physics Letters. ,vol. 81, pp. 4458- 4460 ,(2002) , 10.1063/1.1527995
Claes Thelander, Henrik A. Nilsson, Linus E. Jensen, Lars Samuelson, Nanowire single-electron memory. Nano Letters. ,vol. 5, pp. 635- 638 ,(2005) , 10.1021/NL050006S
E.I. Givargizov, Fundamental aspects of VLS growth Journal of Crystal Growth. ,vol. 31, pp. 20- 30 ,(1975) , 10.1016/0022-0248(75)90105-0
Linus E. Jensen, Mikael T. Björk, Sören Jeppesen, Ann I. Persson, B. Jonas Ohlsson, Lars Samuelson, Role of surface diffusion in chemical beam epitaxy of InAs nanowires Nano Letters. ,vol. 4, pp. 1961- 1964 ,(2004) , 10.1021/NL048825K
Werner Seifert, Magnus Borgström, Knut Deppert, Kimberly A Dick, Jonas Johansson, Magnus W Larsson, Thomas Mårtensson, Niklas Sköld, C Patrik T Svensson, Brent A Wacaser, L Reine Wallenberg, Lars Samuelson, None, Growth of one-dimensional nanostructures in MOVPE Journal of Crystal Growth. ,vol. 272, pp. 211- 220 ,(2004) , 10.1016/J.JCRYSGRO.2004.09.023
Jonas Johansson, C. Patrik T. Svensson, Thomas Mårtensson, Lars Samuelson, Werner Seifert, Mass transport model for semiconductor nanowire growth. Journal of Physical Chemistry B. ,vol. 109, pp. 13567- 13571 ,(2005) , 10.1021/JP051702J
Thomas Mårtensson, C Patrik T Svensson, Brent A Wacaser, Magnus W Larsson, Werner Seifert, Knut Deppert, Anders Gustafsson, L Reine Wallenberg, Lars Samuelson, None, Epitaxial III-V nanowires on silicon Nano Letters. ,vol. 4, pp. 1987- 1990 ,(2004) , 10.1021/NL0487267
Yi Cui, Lincoln J. Lauhon, Mark S. Gudiksen, Jianfang Wang, Charles M. Lieber, Diameter-controlled synthesis of single-crystal silicon nanowires Applied Physics Letters. ,vol. 78, pp. 2214- 2216 ,(2001) , 10.1063/1.1363692
Kenji Hiruma, Masamitsu Yazawa, Keiichi Haraguchi, Kensuke Ogawa, Toshio Katsuyama, Masanari Koguchi, Hiroshi Kakibayashi, GaAs free‐standing quantum‐size wires Journal of Applied Physics. ,vol. 74, pp. 3162- 3171 ,(1993) , 10.1063/1.354585
Erik P. A. M. Bakkers, Jorden A. van Dam, Silvano De Franceschi, Leo P. Kouwenhoven, Monja Kaiser, Marcel Verheijen, Harry Wondergem, Paul van der Sluis, Epitaxial growth of InP nanowires on germanium Nature Materials. ,vol. 3, pp. 769- 773 ,(2004) , 10.1038/NMAT1235