Role of Ba in engineering band gap, photoluminescence and nonlinear optical properties of SnO2 nanostructures for photovoltaic and photocatalytic applications
作者： M.S. Bannur , Albin Antony , K.I. Maddani , P. Poornesh , K.B. Manjunatha
DOI: 10.1016/J.SPMI.2018.08.012
关键词: Crystallite 、 Thin film 、 Materials science 、 Z-scan technique 、 Band gap 、 Doping 、 Tetragonal crystal system 、 Photoluminescence 、 Rutile 、 Optoelectronics
摘要: Abstract In this article, we present the role of Ba doping in tuning energy gap, photoluminescence (PL) and third-order optical nonlinearity χ(3) SnO2 nanostructures. Surface morphology analysis indicates fragmentation larger grains upon incorporation possibly caused by lattice mismatch effects. X-ray diffraction reveals polycrystalline nature nanostructures with rutile tetragonal structure. A shift preferential growth orientation plane (200, 211, 110) has been observed increase concentration. PL spectroscopy studies confirms crystallinity films ruling out presence Sn interstitials. The green luminescent center at 550 nm trap emission 578 nm are attributed to singly ionized charge state oxygen defect levels band gap. Relatively large change gap (3.64 eV −3.13 eV) arises due points credibility thin for use photovoltaic photocatalytic applications. Third-optical investigated Z-scan technique shows as high 3.37 × 10−3 esu indicating suitability nonlinear (NLO) devices such power limiters switches.
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