Preparation, electrical properties and annealing of ZnGeAs2
作者： B Mercey , D Chippaux , J Vizot , A Deschanvres
DOI: 10.1016/0022-3697(86)90174-5
关键词: Inorganic compound 、 Arsenic 、 Annealing (metallurgy) 、 Zinc 、 Crystal growth 、 Single crystal 、 Inorganic chemistry 、 Solvent 、 Analytical chemistry 、 Electrical resistivity and conductivity 、 Chemistry
摘要: Abstract Crystals of ZnGeAs 2 have been grown from solution (Zn x As y solvent). Electrical properties crystals before and after annealing in arsenic or phosphorus vapors are reported. The always ( p ) type. Assuming the electrical as to be due zinc vacancies, a mechanism is given explain change free carrier concentration during annealing. A good fit obtained between observed calculated values.
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