Indirect exchange interaction in extremely non-parabolic zero-gap semiconductors
作者： C Lewiner , G Bastard
DOI: 10.1088/0022-3719/13/12/016
关键词: Zero (complex analysis) 、 Condensed matter physics 、 Magnetic moment 、 Antiferromagnetism 、 Semiconductor 、 Indirect exchange 、 Physics
摘要: The indirect exchange interaction between two localised magnetic moments is calculated for Hg1-xMnxTe alloys near the zero-gap semiconductor transition. For such Mn concentrations non-parabolic effects are overwhelming and have been accounted properly. electron-heavy-hole virtual transitions shown to be larger than electron-light-hole transitions. net integral antiferromagnetic; numerical value of Curie-Weiss temperature compared with experimental determinations.
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