Self-diffusion and impurity diffusion of fee metals using the five-frequency model and the Embedded Atom Method
作者： J. B. Adams , S. M. Foiles , W. G. Wolfer
关键词: Metallurgy 、 Atom 、 Activation energy 、 Molecular physics 、 Impurity 、 Crystallographic defect 、 Self-diffusion 、 Vacancy defect 、 Materials science 、 Transition metal 、 Diffusion (business)
摘要: The activation energies for self-diffusion of transition metals (Au, Ag, Cu, Ni, Pd, Pt) have been calculated with the Embedded Atom Method (EAM); results agree well available experimental data both mono-vacancy and di-vacancy mechanisms. EAM was also used to calculate vacancy migration near dilute impurities. These determine atomic jump frequencies classic “five-frequency formula,” which yields diffusion rates impurities by a mechanism. calculations were found fairly experiment Neumann Hirschwald's “Tm” model.
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