Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons
作者： Hong-Yeol Kim , Travis Anderson , Michael A. Mastro , Jaime A. Freitas , Soohwan Jang
DOI: 10.1016/J.JCRYSGRO.2011.01.052
关键词: Irradiation 、 Optoelectronics 、 Transistor 、 High-electron-mobility transistor 、 Materials science 、 Spectral line 、 Photoluminescence 、 Induced high electron mobility transistor 、 Proton 、 High electron
摘要: Abstract An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2×10 15 /cm 2 . Photoluminescence spectra measured 5 K indicated that GaN lattice severely damaged by collisions high energy although distinct near band-edge features were still observable. I DS – V measurement showed the current level decreased 43% after proton irradiation, and an GS suggested damage metal-contact/AlGaN interface minimal. Transistor operation found be resistant which partially attributed self-healing mechanism in proximity interface.
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