Recherches systematiques sur la photoreponse des jonctions pn de silicium a barriere de surface Application à l'amélioration du procédé de fabrication des détecteurs à avalanches destinés à la spectrométrie des rayons X mous

摘要: Zusammenfassung By irradiating the surface of a barrier detector with an X-ray beam (50 kV) or quasi-punctual luminous spot, short-circuit current in vacuum and different gases (argon, oxygen, air) containing variable proportions water vapor was measured. At same time relaxation associated photoresponse determined. These measurements made it possible to establish series criteria for fabrication detectors function on avalanche regime. The comparison experiment values those calculated by Cumerow's model that photopotential has furnished precise information structure p-n junction view better knowledge mechanism.