作者: T. L. Chu
DOI: 10.1116/1.568699
关键词: Substrate (electronics) 、 Nanocrystalline silicon 、 Silane 、 Optoelectronics 、 Silicon 、 Polycrystalline silicon 、 Diffusion barrier 、 Metallurgy 、 Monocrystalline silicon 、 Graphite 、 Materials science
摘要: Silicon layers on foreign substrates have been used for various device applications during the past fifteen years. The substrate requirements, deposition techniques, and characterization of properties silicon are briefly reviewed. Polycrystalline deposited low‐cost is a promising material fabrication solar cells. In this work, thermal decomposition silane appropriate dopants has to deposit polycrystalline containing shallow p–n junction steel, graphite, metallurgical‐grade substrates. When steel was as substrate, borosilicate interlayer diffusion barrier eliminate formation or iron silicides. borosilicate/steel exhibited poor microstructure, cells had low conversion efficiencies. graphite showed considerably better efficiencies up 1.5% been...