Imaging the Interaction of Electrical Currents with Magnetization Distributions

摘要: About a decade ago, the understanding of interaction mechanisms between electrical currents and magnetic objects like domain walls or vortices was still in its infancy. Both, theory experiments were moving on uncharted grounds, with new many times contradicting results being published from different groups at increasing pace. Previously, only Oersted field current available to manipulate state system. The latter extensively used storage devices, starting early core memory up write heads latest hard drive technologies based perpendicular recording tunnel-magnetoresistive (TMR) readout sensors, alter bits. Even prototypes random-access (MRAM) for writing.