Study of intermixing and Zr-silicide formation using swift heavy ion irradiation
作者： Garima Agarwal , Vaibhav Kulshrestha , Renu Dhunna , D. Kabiraj , Shikha Verma
DOI: 10.1007/S00339-010-5631-2
关键词: Ion track 、 Swift heavy ion 、 Ion beam mixing 、 Analytical chemistry 、 Chemistry 、 Schottky barrier 、 Irradiation 、 Ion 、 Thin film 、 Fluence
摘要: Swift heavy ion (SHI) beam induced irradiation is an established technique for investigating structural modifications in thin films depending on the S e sensitivity of material. Intermixing due to 120 MeV Au at different fluences from 1012 1014 ions/cm2 has been reported as a function fluence a-Si/Zr/a-Si Si substrate. The samples are characterized before (pristine) and after using Grazing Incident X-ray Diffraction (GIXRD) Rutherford Backscattering Spectroscopy (RBS), which confirm formation ZrSi film interface. It suggested that mixing mainly electronic energy loss since transferred high ions seems create transient molten zone along track. found interface increases linearly with increase fluence. effect explained framework Thermal spike model. surface roughness system measured Atomic Force Microscopy (AFM) technique. current conduction mechanism Schottky barrier height also calculated by taking I–V curves across Metal/Si junction.
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