Hot-Electron Transport in Quantizing Magnetic Fields

作者: R. J. Nicholas , J. C. Portal

DOI: 10.1007/978-1-4684-3638-9_10

关键词: Condensed matter physicsFermi gasLandau quantizationFermi levelFermi energyMagnetic fieldElectric fieldElectronPhysicsElectron temperature

摘要: The influence of a magnetic field upon the electrons and holes in metals semiconductors is to quantize energies into set Landau levels. This quantization can lead several striking quantum effects electrical transport properties at high fields. When carrier concentration sufficiently that constant, well defined, Fermi energy exists within conduction or valence band low temperatures (e.g. heavily doped, degenerate semiconductor), then there an oscillatory varia tion conductivity with field; Shubnikov-de Haas effect. Oscillations occur as level passes through density states edge each level, while amplitude these oscillations strong function temperature. Section 2 describes how this temperature dependence may be used investigate electron gas cases where not same lattice Provided described by Maxwellian distribution characteristic Te, method study electric field, time, also field.

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