Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires.
作者： Jesper Wallentin , Kilian Mergenthaler , Martin Ek , L. Reine Wallenberg , Lars Samuelson
DOI: 10.1021/NL200492G
关键词: Electrical measurements 、 Optoelectronics 、 Wurtzite crystal structure 、 Metalorganic vapour phase epitaxy 、 Doping 、 Nanowire 、 Photoluminescence 、 Materials science 、 Band gap 、 Blueshift
摘要: We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest show a pure wurtzite crystal structure, in contrast bulk has the zinc blende structure. display photoluminescence is strongly blue shifted compared band gap, well into visible range. find evidence second conduction minimum at gamma point about 0.23 eV above edge, excellent agreement recent theoretical predictions. Electrical measurements high conductivity and breakdown currents 10(7) A/cm(2).
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