Structural and optical properties of InGaN/GaN multiple quantum wells : The effect of the number of InGaN/GaN pairs
作者： Dong-Joon Kim , Yong-Tae Moon , Keun-Man Song , Chel-Jong Choi , Young-Woo Ok
DOI: 10.1016/S0022-0248(00)00715-6
关键词: Optoelectronics 、 Photoluminescence 、 Thin film 、 Relaxation (NMR) 、 Dislocation 、 Crystallography 、 Epitaxy 、 Diffraction 、 Transmission electron microscopy 、 Materials science 、 Quantum well
摘要: The effect of the number InGaN/GaN quantum well (QW) pairs on interfacial structural and optical properties multiple wells (MQWs), as grown by low-pressure metalorganic vapor-phase epitaxy was examined. As QW increased, In-rich InGaN precipitates were more readily detected in MQWs cross-sectional transmission electron microscope. intensity photoluminescence (PL) peak decreased PL red-shifted with an increase pairs. X-ray diffraction measurements revealed that structure between GaN also deteriorated increasing These results can be attributed to relaxation accumulated strain through dislocations induced total thickness suggest defects such facilitate formation phases layers MQWs.
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