The temperature dependence of ion-beam-induced amorphization in β-SiC
作者： W.J. Weber , L.M. Wang
DOI: 10.1016/0168-583X(95)00722-9
关键词: Ion beam 、 Irradiation 、 Two stages 、 Amorphous solid 、 National laboratory 、 Materials science 、 Crystallography 、 Analytical chemistry 、 Activation energy 、 Atmospheric temperature range 、 Ion
摘要: Abstract The ion-beam-induced crystalline-to-amorphous transition in monolithic β-SiC has been studied as a function of irradiation temperature using the HVEM-Tandem Facility at Argonne National Laboratory. Specimens were irradiated with 1.5 MeV Xe + ions over range from 40 to 550 K, and evolution amorphous state was followed situ HVEM. At displacement dose for complete amorphization is 0.34 dpa increases two stages. simultaneous recovery process associated high-temperature stage (above 200 K) an activation energy 0.097 ± 0.019 eV. critical above which does not occur 498 K under these conditions.
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