Resistive switching behavior of a CeO 2 based ReRAM cell incorporated with Si buffer layer
作者： C. Dou , K. Kakushima , P. Ahmet , K. Tsutsui , A. Nishiyama
DOI: 10.1016/J.MICROREL.2011.10.019
关键词: Electrical conductor 、 Tin 、 Layer (electronics) 、 Resistive random-access memory 、 Power (physics) 、 Materials science 、 Voltage 、 Buffer (optical fiber) 、 Nanotechnology 、 Reset (computing) 、 Optoelectronics
摘要: Abstract We propose a novel resistive switching device with W/CeO 2 /Si/TiN structure by incorporating very thin Si buffer layer in the interface, memory performance of this such as forming voltage, operation power, and window endurance characteristics were found to be remarkably improved compared without layer. This improvement was attributed formation Ce-silicate thus proper introduction oxygen vacancies at interface. The gradual reset process under sweeping voltage quantitatively analyzed parallel conductive filaments model. Our results provide guideline for control further optimizing give new insights into process.
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nctu.edu.tw参考文章(18)
Qi Liu, Weihua Guan, Shibing Long, Rui Jia, Ming Liu, Junning Chen, Resistive switching memory effect of ZrO2 films with Zr+ implanted Applied Physics Letters. ,vol. 92, pp. 012117- ,(2008) , 10.1063/1.2832660
Z Fang, H Y Yu, W J Liu, Z R Wang, X A Tran, B Gao, J F Kang, Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$ -Based RRAM Devices IEEE Electron Device Letters. ,vol. 31, pp. 476- 478 ,(2010) , 10.1109/LED.2010.2041893
C. T. Campbell, Chemistry. Oxygen vacancies and catalysis on ceria surfaces. Science. ,vol. 309, pp. 713- 714 ,(2005) , 10.1126/SCIENCE.1113955
Friedrich Esch, Stefano Fabris, Ling Zhou, Tiziano Montini, Cristina Africh, Paolo Fornasiero, Giovanni Comelli, Renzo Rosei, Electron localization determines defect formation on ceria substrates. Science. ,vol. 309, pp. 752- 755 ,(2005) , 10.1126/SCIENCE.1111568
Chih-Yang Lin, Dai-Ying Lee, Sheng-Yi Wang, Chun-Chieh Lin, Tseung-Yuen Tseng, Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films Surface & Coatings Technology. ,vol. 203, pp. 480- 483 ,(2008) , 10.1016/J.SURFCOAT.2008.07.004
Ruth Graham, The 21st century engineering graduate Materials Today. ,vol. 11, pp. 6- ,(2008) , 10.1016/S1369-7021(08)70002-6
B. Gao, S. Yu, N. Xu, L.F. Liu, B. Sun, X.Y. Liu, R.Q. Han, J.F. Kang, B. Yu, Y.Y. Wang, Oxide-based RRAM switching mechanism: A new ion-transport-recombination model international electron devices meeting. pp. 1- 4 ,(2008) , 10.1109/IEDM.2008.4796751
J. Y. Son, Y.-H. Shin, Direct observation of conducting filaments on resistive switching of NiO thin films Applied Physics Letters. ,vol. 92, pp. 222106- ,(2008) , 10.1063/1.2931087
Mogens Mogensen, Nigel M Sammes, Geoff A Tompsett, Physical, chemical and electrochemical properties of pure and doped ceria Solid State Ionics. ,vol. 129, pp. 63- 94 ,(2000) , 10.1016/S0167-2738(99)00318-5
Rainer Waser, Masakazu Aono, Nanoionics-based resistive switching memories Nature Materials. ,vol. 6, pp. 833- 840 ,(2007) , 10.1038/NMAT2023