InAs Diodes Fabricated Using Be Ion Implantation
作者： Benjamin S. White , Ian C. Sandall , John P. R. David , Chee Hing Tan
关键词: Ion implantation 、 Dark current 、 Annealing (metallurgy) 、 Planar 、 Diode 、 Optoelectronics 、 Materials science 、 Doping 、 Schottky diode
摘要: Be ion implantation and annealing conditions were optimized to demonstrate an effective method for selective area p-type doping in InAs. Optimized subsequently utilized produce planar InAs diodes. The implanted diodes had a superior dynamic resistance-area product comparable dark current with n-i-p mesa when operated at low temperatures.
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