Structural and Electronic Properties of PTCDA Thin Films on Epitaxial Graphene
作者： Han Huang , Shi Chen , Xingyu Gao , Wei Chen , Andrew Thye Shen Wee
DOI: 10.1021/NN9008615
关键词: Thin film 、 Scanning tunneling microscope 、 Silicon carbide 、 Wide-bandgap semiconductor 、 Layer (electronics) 、 Synchrotron 、 Monolayer 、 Photoemission spectroscopy 、 Materials science 、 Optoelectronics 、 Crystallography
摘要: … The PTCDA films grow continuously over the EG step edges, but not on HOPG. … PTCDA on monolayer EG shows a wide band gap larger than 3.3 eV, consistent with pristine PTCDA …
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