Persistent template effect in InAs/GaAs quantum dot bilayers
作者： E. Clarke , P. Howe , M. Taylor , P. Spencer , E. Harbord
DOI: 10.1063/1.3429226
关键词: Laser linewidth 、 Molecular beam epitaxy 、 Materials science 、 Optoelectronics 、 Population 、 Crystal growth 、 Epitaxy 、 Quantum dot 、 Wavelength 、 Gallium arsenide
摘要: The dependence of the optical properties InAs/GaAs quantum dot (QD) bilayers on seed layer growth temperature and second InAs coverage is investigated. As increased, a low density large QDs obtained. This results in concomitant increase size layer, which extends their emission wavelength, reaching saturation value around 1400 nm at room for GaAs-capped bilayers. Capping with InGaAs further extension to 1515 narrow linewidth 22 meV. Addition more high does not result significant wavelength as most additional material migrates coalesced islands but, contrast single layers, substantial population regular remains.
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