Synthesis and characterization of sputtered titanium nitride as a nucleation layer for novel neural electrode coatings

摘要: Abstract A growing demand for chronically implantable electrodes has led to a search the most suitable neural electrode interface material. Nobel metals such as platinum (Pt) are inadequate electrode/neuron interfaces at small scales due their poor electrochemical properties, low charge injection and high density per unit area. Titanium nitride (TiN) been implemented in application its outstanding properties. In this work, TiNx films were deposited by non-reactive radio frequency (RF) magnetron sputtering towards development of novel TiN nanowires (NWs) interface. Although, there is substantial work on material, growth using RF not reported previously optimised NWs use applications. The parameters power argon (Ar) flow rate varied order investigate effects structural, electrical properties films. dense film morphology was observed scanning electron microscopy (SEM) images thin showing columnar structure. preferential orientation changed between (200) (111) with Ar variation kinetic energy (KE) sputtered atoms. crystallites size obtained range 13–95 nm. Surface roughness found increase from 0.69 1.95 nm increased. showed good resistivity 228 μΩ cm. Stoichiometry vary conditions which nitrogen content deplete rate. behaviour characterised highest capacitance value 0.416 mF/cm2. From results, it can be suggested that easily act nucleation layer nanowires.