Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source
作者： Eisuke Tokumitsu , Yoshimitsu Kudou , Makoto Konagai , Kiyoshi Takahashi
DOI: 10.1063/1.333344
关键词: Molecular beam epitaxy 、 Deposition (law) 、 Epitaxy 、 Crystal growth 、 Trimethylgallium 、 Optoelectronics 、 Molecular beam 、 Monocrystalline silicon 、 Substrate (electronics) 、 Materials science 、 Inorganic chemistry
摘要: Crystal growth of GaAs using trimethylgallium (TMG) as a Ga source in molecular beam epitaxial system has been studied. Mirror‐like monocrystalline layers were easily obtained on substrate at the temperature 530–630°C. Epitaxial p type and carrier concentration these films was about 1018–1019 cm−3. In particular, no deposition observed SiO2 film this TMG‐As4 system. This feature showed possibility selective epitaxy GaAs.
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