Field Emission Energy Distribution from Planar Integrated Graphene

摘要: We report field emission energy distributions from planar graphene edges. Field effect transistors with integrated gate and drain electrodes vacuum transport parallel to the substrate surface are fabricated using edge sources prepared two types of graphene. The produced by reduced oxide roughly symmetric, often contain multiple peaks, shift over time. These characteristics suggest originates in local states. Emission high quality grown on Cu foil more closely resembles a linear density states, suggesting starts delocalized band as well discrete