Semiconductor LED flip-chip having low refractive index underfill

摘要: In accordance with the invention, a difference in index of refraction is created at mesa wall III-nitride flip chip light emitting device. The step reflects much incident on back into device where it can be usefully extracted. some embodiments, solder submount or high gel coating and creates sealed gap between submount. filled material having low refraction. other covers substrate device, fills