Capacitive pressure sensor and method
作者： Andrew B. Graham , Ando Feyh
DOI:
关键词: Electrode 、 Layer (electronics) 、 Optoelectronics 、 Base (geometry) 、 Oxide 、 Electronic engineering 、 Materials science 、 Wafer 、 Microelectromechanical systems 、 Etching (microfabrication) 、 Capacitive pressure sensor
摘要: In one embodiment, a method of forming MEMS device includes providing silicon wafer with base layer and an intermediate above upper surface the layer. A first electrode is defined in oxide portion provided cap on second The further etching to form cavity such that when are projected onto layer, encompasses cavity.
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