Recent advances in quantum dot optoelectronic devices and future trends

摘要: Publisher Summary Quantum dots are zero-dimensional quantum structures whose carriers found in three-dimensional potential confinement. The physical properties of differ the density states as confinement increases. Electron and hole could be obtained through a complicated process that considers strong electron coupling interactions. Therefore, peculiar optical electrical characteristics dot devices predicted chapter. realization (or boxes) with small enough size to comparable de Broglie wavelength was first made by electron-beam lithography etching. However, this method yielded limited device performance, mainly because surface damage difficulties postgrowth. Since Stranski–Krastanow growth mode rediscovered, successful fabrication has been achieved. chapter demonstrates optoelectronic devices—such infrared photodetectors lasers—based on self-assembling dots. lasers demonstrate thresholdless operation, temperature-insensitive threshold current, high-speed laser modulation. In addition, highly strained self-assembled can used obtain 1.3-μm diodes gallium arsenide (GaAs) substrate for optical-communications applications.