Properties of low-temperature ytterbium condensates grown in a medium of gaseous helium
作者： V. M. Kuz’menko , A. N. Vladychkin
DOI: 10.1063/1.1614237
关键词: Materials science 、 Annealing (metallurgy) 、 Amorphous solid 、 Chemical physics 、 Condensed matter physics 、 Electron mobility 、 Charge carrier 、 Ytterbium 、 Crystallization 、 Magnetoresistance 、 Hall effect
摘要: The features of the electronic properties and mechanisms crystallization amorphous ytterbium films obtained by low-temperature condensation in a medium gaseous helium (at partial pressure 2.3×10−3–7 Pa) are investigated. changes conductivity, magnetoresistance, Hall effect upon annealing corresponding density mobility charge carriers calculated two-band model. A model structural transformation condensates gas-saturated process is proposed.
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