Dislocation formation mechanism in strained InxGa1−xAs islands grown on GaAs(001) substrates

摘要: The formation mechanism of misfit dislocations in lattice‐mismatched InxGa1−xAs epilayers (0.2≤x≤1) grown on GaAs substrates has been investigated experimentally. results suggest that 1/3〈111〉 Frank partial are grown‐in at island edges highly (x≥0.4). Then after further growth 90° Shockley nucleated to remove the stacking faults, reacting with partials form complete dislocations. An atomic model is proposed explain dislocation. This could observed change dominant type dislocation from 60° small mismatches edge large lattice mismatches.