Transverse piezoelectric field-effect transistor based on single ZnO nanobelts
作者： Ya Yang , Junjie Qi , Wen Guo , Yousong Gu , Yunhua Huang
DOI: 10.1039/C0CP00420K
关键词: Binary compound 、 Analytical chemistry 、 Pressure sensor 、 Transverse plane 、 Optoelectronics 、 Piezoelectricity 、 Substrate (electronics) 、 Chemistry 、 Transistor 、 Field-effect transistor 、 Graphite
摘要: A transverse piezoelectric field-effect transistor (TP-FET) based on single ZnO nanobelts has been fabricated a metallic graphite substrate in an atomic force microscope (AFM). The source-to-drain current of the TP-FET was found to decrease with increasing loading under positive bias due carrier-trapping effect and creation charge-depletion zone. This can be applied as force/pressure sensor for measuring nanoNewton forces ranged from 0 700 nN.
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