Optical studies of ZnO grown by metalorganic chemical vapour deposition
作者： Zhiwei Deng
DOI:
关键词: Photoluminescence 、 Dopant 、 Metalorganic vapour phase epitaxy 、 Exciton 、 Chemical vapor deposition 、 Sapphire 、 Analytical chemistry 、 Raman spectroscopy 、 Materials science 、 Doping
摘要: The controlled n-type and p-type doping of ZnO is an ongoing challenging field study which needs to be resolved before this material can fulfill its great promise as optoelectronic material. Metalorganic chemical vapour deposition (MOCVD) a process that has been extensively investigated for growth. However, there have very few reports high resolution photoluminescence (PL) spectroscopy MOCVD grown ZnO. In thesis, strong donor bound exciton transitions with linewidths low 0.2 meV were observed in 4.2 K temperature PL spectrum nominally undoped epilayers dimethylzinc (DMZn) nitrous oxide (N2O) at 800 ◦C on c-plane sapphire substrates by MOCVD. Intentional group III dopants such Al growth studied. addition amounts precursors allows us unambiguously observe emission from these impurities results identification the dominant residual Ga infer compressive strain layers due lattice mismatch between substrate. measurements annealed oxygen 900−1000 show are quite mobile temperatures above ◦C. Raman scattering performed investigate vibrational properties Strong broad modes sp2 graphitic carbon clusters found around 1350 cm−1 1600 cm−1. At (>700 ◦C), disappear dominated phonons.
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