Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge
作者： C. H. Lee , C. Lu , T. Tabata , W. F. Zhang , T. Nishimura
DOI: 10.1109/IEDM.2013.6724545
关键词: Gate stack 、 Materials science 、 MOSFET 、 High-κ dielectric 、 Oxygen potential 、 Germanium compounds 、 Electron mobility 、 Electronic engineering 、 Layer (electronics) 、 Optoelectronics
摘要: The interfacial layer (IL) control is a key to achieving deep sub-nm EOT gate stacks with maintaining superior interface properties. We propose the thermodynamically robust IL …
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iczhiku.com 参考文章(1)
Choong Hyun Lee, T Nishimura, K Nagashio, K Kita, A Toriumi, High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation IEEE Transactions on Electron Devices. ,vol. 58, pp. 1295- 1301 ,(2011) , 10.1109/TED.2011.2111373